| 摘要 |
The present invention provides a sintered aluminum nitride body and a ceramic substrate, which show a volume resistivity of not less than 108 OMEGA.cm even at an elevated temperature of as high as 500° C. The present invention relates to a ceramic substrate comprising a conductive layer disposed internally or on the surface thereof, wherein said ceramic substrate comprises a nitride ceramic and boron is contained in said nitride ceramic, and to a sintered aluminum nitride body containing boron.
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