To avoid premature breakdown at the edge of the active area of RESURF trench-gate MOS device, an edge field plate (24) can be placed with a connection to the gate and a second spaced field plate (24) in the same trench (12). The gate trench network (12) could be either formed by hexagon unit cells or by square unit cells. Since the RESURF condition requires a small cell pitch, self-aligned processing could be used.
申请公布号
WO03023862(A1)
申请公布日期
2003.03.20
申请号
WO2002IB03708
申请日期
2002.09.03
申请人
KONINKLIJKE PHILIPS ELECTRONICS N.V.
发明人
IN 'T ZANDT, MICHAEL, A., A.;HIJZEN, ERWIN, A.;HUETING, RAYMOND, J., E.