发明名称 Voltage generator for semiconductor device
摘要 A voltage generator for outputting an output voltage at an output terminal thereof includes a driver MOS transistor of a first conductivity type having a first end connected to said output terminal and a capacitor connected between the output terminal and a second voltage node. The capacitor comprises a plurality of trench capacitors formed in a semiconductor substrate.
申请公布号 US6532167(B2) 申请公布日期 2003.03.11
申请号 US20010903731 申请日期 2001.07.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KANEKO TETSUYA;OKAMURA JUNICHI
分类号 H01L27/04;G11C7/06;G11C11/401;G11C11/407;G11C11/409;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):G11C11/24;G11C7/00 主分类号 H01L27/04
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