| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing using conditions decided based on a parameter by newly proposing changing guidelines (parameter) of manufacturing conditions effective to improve a charge injection speed. SOLUTION: The method for manufacturing a nonvolatile semiconductor memory device comprises a step of forming a gate dielectric film having a plurality of dielectric films BTM, CS, and TOP including a charge storage film CS on a surface of a semiconductor CH formed with a channel. The method further comprises a step of forming the film CS having a step of deciding a lower limit value of an Si-H bond surface density in the storage film necessary to perform a desired charge injection speed under predetermined bias condition, a step of deciding a film forming condition (e.g. a gas flow ratio) in which the Si-H bond surface density becomes a lower limit value or more, and a step of forming the film CS according to decided film forming conditions.
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