| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the breakdown strength of a gate oxide film is deteriorated and that the reliability of a gate is dropped. SOLUTION: In a process of forming p<+> impurity implantation regions 21, 22, a part in which a gap is formed is formed between a first region 22a situated on the inner circumferential side in the region 22 on the outer circumferential side of a breakdown strength part and a second region 22b situated on the outer circumferential side, and the boundary part between a field oxide film 16 formed in a field-oxide-film formation process and the gate oxide film 8 formed in a gate-oxide-film formation process is arranged in the gap formed between the first region 22a and the second region 22b. |
