发明名称 BAKING METHOD AND BAKING SYSTEM
摘要 PROBLEM TO BE SOLVED: To solve a problem that although the production process of a liquid crystal panel employing a thin film transistor comprises a patterning process employing resist, the line width of pattern is made extremely fine as the number of pixels increases and the effect of unevenness of the pattern due to temperature variation at the time of baking the resist has become relatively significant as compared with a conventional case and thereby unevenness of the resist temperature must be kept below a specified level for a resist applied to a large glass substrate. SOLUTION: In the baking process of resist applied onto the surface of a substrate 1, degree of evaporation of a solvent contained in the resist becomes uniform in the substrate because the substrate 1 is supported alternately by two supporting pin groups 21 and 22 designed to support the substrate 1 at different positions and thereby the line width of a resist pattern becomes uniform in the substrate after developing the resist.
申请公布号 JP2003068598(A) 申请公布日期 2003.03.07
申请号 JP20010261459 申请日期 2001.08.30
申请人 NEC KAGOSHIMA LTD 发明人 NISHIMOTO JUNJI
分类号 G03F7/38;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/38
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