发明名称 |
Semiconductor memory device and manufacturing method thereof |
摘要 |
A semiconductor memory device includes a control gate electrode formed on a first main surface of a semiconductor substrate through a first insulating film, and a floating gate electrode covering a stepped region which connects the first main surface of the semiconductor substrate and a second main surface positioned at a lower level than the first main surface through a second insulating film and having a side surface capacitively coupled with one side surface of the control gate electrode through a third insulating film. The stepped region has a first stepped portion connected with the first main surface and a second stepped portion connecting the first stepped portion and the second main surface.
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申请公布号 |
US2003042533(A1) |
申请公布日期 |
2003.03.06 |
申请号 |
US20020077979 |
申请日期 |
2002.02.20 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NORO FUMIHIKO;OGURA SEIKI |
分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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