发明名称 Output buffer circuit for reducing variation of slew rate due to variation of PVT and load capacitance of output terminal, and semiconductor device including the same
摘要 An output buffer circuit for reducing a variation of the slew rate due to a variation of process, voltage and temperature (PVT) and the load capacitance of an output terminal, and semiconductor device including the same, include a first slew rate control circuit for pulling down the voltage of a pull-up signal in multiple stages in response to a first control signal, and a second slew rate control circuit for pulling up the voltage of a pull-down signal in multiple stages in response to a second control signal. A pull-up driver is provided for pulling up an output terminal in response to the pull-up signal, and a pull-down driver is provided for pulling down the output terminal in response to the pull-down signal. The first and second slew rate control circuits are controlled by bias voltages that are provided by a phase locked loop circuit and compensate for changes in PVT.
申请公布号 US2003042953(A1) 申请公布日期 2003.03.06
申请号 US20020229976 申请日期 2002.08.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN SOON-KYUN
分类号 G11C11/417;G06F3/00;G11C11/40;H03K5/00;H03K5/13;H03K17/687;H03K19/003;H03K19/0175;H03K19/0948;H03L7/099;(IPC1-7):H03K5/12 主分类号 G11C11/417
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