| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve reliability and production yield of a thin film transistor for a flat-type display unit by preventing a silicon layer from becoming easily aggregated in a melting step, by thickly vapor depositing an amorphous silicon layer in a predeter mined range from existing ones, when a single crystal silicon is formed by utilizing SLS crystallization technology. SOLUTION: A method for vapor depositing the amorphous silicon layer for the SLS crystallization comprises a step of vapor depositing in the range of silicon layer thickness of 6,000Åto 2,000Å, when the amorphous silicon (a-Si) layer is vapor deposited on an insulating substrate in a step of forming the single-crystal silicon by utilizing a complete melting energy density. A process window is enlarged by this method, defects of the crystallization are reduced, and the production yield can be improved. Since the crystallization characteristics are improved, the mobility is increased, and hence the method can be utilized for a CMOS element for a drive-circuit integral type liquid crystal display unit, having high resolution, and the method has the advantage of being able to apply in a wide range as a device for the flat-type display unit.</p> |
