发明名称 OUTER RESONATOR SEMICONDUCTOR LASER, METHOD OF MANUFACTURING THE SAME, AND WAVELENGTH MULTIPLEXING TRANSMISSION SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing an external resonator semiconductor laser with reduced kinds, the external resonator semiconductor laser, and a wavelength multiplexing transmission system. SOLUTION: This outer resonator semiconductor laser 1 has a fiber grating 16 and a semiconductor optical amplifier 20. The fiber grating 16 has a Bragg diffraction grating 16a and an optical waveguide. The Bragg diffraction grating 16 has a frequency fFG, corresponding to maximum reflectance. The Bragg diffraction grating 16a is optically coupled with the optical waveguide 16c. The oscillation frequency fLD of the fiber grating 16 of the outer resonator semiconductor laser 1 is determined, so as to satisfy the inequality 0<fFG-fLD <20 GHz. With such a constitution for the external resonator semiconductor laser 1, mode hoppings can be reduced within the range of the oscillation frequency.
申请公布号 JP2003060296(A) 申请公布日期 2003.02.28
申请号 JP20010242323 申请日期 2001.08.09
申请人 SUMITOMO ELECTRIC IND LTD 发明人 KATO TAKASHI;HASHIMOTO JUNICHI;YAMABAYASHI NAOYUKI
分类号 G02B6/42;H01S5/0687;H01S5/14;H01S5/50;(IPC1-7):H01S5/14;H01S5/068 主分类号 G02B6/42
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