SYSTEMS FOR WAFER LEVEL BURN-IN OF ELECTRONIC DEVICES

摘要

Systems for wafer level burn-in (WLBI) of semiconductor devices (210, 215) a re presented. Systems having at least two electrodes for the application of electrical bias and/or thermal power on each side of a wafer (100) having ba ck (105) and front (110) electrical contacts for semiconductor devices borne by the wafer (100) is described. Methods of wafer level burnin using the system are also described. Furthermore, a pliable conductive layer (220) is describ ed for supplying pins or contacts (110) on device side of a wafer with electric al contact. The pliable conductive layer (220) can allow for an effective serie s R in each of the devices borne by the wafer (100), thus helping keep voltage bias level consistent. The pliable conductive layer can also prevent damage to a wafer when pressure is applied to it by chamber contacts (210, 215) and pressure onto surfaces of the wafer (100) during burn-in operations. A cooli ng system (660) is also described for enabling the application of a uniform temperature to the wafer (100) undergoing burn-in.