| 摘要 |
A photodetector uses a semiconductor on insulator (SOI) substrate having an optical grating over the silicon semiconductor to change the direction of incident light to divert it into the silicon which functions as waveguide. The underlying insulator operates as one boundary of the waveguide and the overlying grating operates as the other. Photodetector electrodes are placed in the silicon, which puts them in close proximity to the carriers that are generated by the light entering the silicon waveguide. |
