| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a tungsten sputtering target having high density and fine crystal structure so far impossible to attain by the conventional pressure sintering method alone and also having greatly improved transverse rupture strength by the improvement of the sintering characteristics and manufacturing conditions of tungsten powder to be used, hereby suppressing the occurrence of particle defect on a sputter-deposited film, and stably manufacturing the tungsten target at a low cost. SOLUTION: The tungsten target of sintered compact for sputtering has >=99% relative density, <=100μm average particle size, <=20 ppm oxygen content and >=500 MPa transverse rupture strength.
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