| 摘要 |
The invention relates to a semiconductor component with a base zone (3) extending in a lateral direction (x) of a first type of conductivity (n) and at least two contact areas (1, 2) for connection to electric contacts (A, K) which zones are separate at least from the base zone (3) in the lateral direction (x). A base material of the base zone (3) is silicon (Si) and has a dopant concentration of 1012 to 5x1014 cm-3 and a respective dopant concentration (NA) along a lateral direction (x) of less than 2x1012 cm-2 determined by integrating the dopant concentration across the vertical thickness of the base area (3). The semiconductor component further comprises compensation layers (6, 6a, 6b, 6c, 7, 7a, 7b, 7c, 8) of a second type of conductivity (p) opposed to the first type of conductivity. Said layers extend inside or outside the base area in a lateral direction (x).
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