发明名称 |
Polymer, resist composition and patterning process |
摘要 |
A polymer comprising units of formula (1-1) or (1-2) and having a weight average molecular weight of 1,000 to 500,000 is provided.R1 is an acid labile group, R2 is H or straight or branched C1-4 alkyl, Z is a tetravalent C2-10 hydrocarbon group, and k=0 or 1. A resist composition comprising the polymer as a base resin has significantly improved sensitivity, resolution and etching resistance and is very useful in microfabrication.
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申请公布号 |
US6524765(B1) |
申请公布日期 |
2003.02.25 |
申请号 |
US20000711311 |
申请日期 |
2000.11.14 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
NISHI TSUNEHIRO;WATANABE TAKERU;HATAKEYAMA JUN;KINSHO TAKESHI;HASEGAWA KOJI;TACHIBANA SEIICHIRO |
分类号 |
G03F7/027;G03F7/004;G03F7/039;(IPC1-7):G03F7/20;G03C1/73 |
主分类号 |
G03F7/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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