发明名称 Polymer, resist composition and patterning process
摘要 A polymer comprising units of formula (1-1) or (1-2) and having a weight average molecular weight of 1,000 to 500,000 is provided.R1 is an acid labile group, R2 is H or straight or branched C1-4 alkyl, Z is a tetravalent C2-10 hydrocarbon group, and k=0 or 1. A resist composition comprising the polymer as a base resin has significantly improved sensitivity, resolution and etching resistance and is very useful in microfabrication.
申请公布号 US6524765(B1) 申请公布日期 2003.02.25
申请号 US20000711311 申请日期 2000.11.14
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 NISHI TSUNEHIRO;WATANABE TAKERU;HATAKEYAMA JUN;KINSHO TAKESHI;HASEGAWA KOJI;TACHIBANA SEIICHIRO
分类号 G03F7/027;G03F7/004;G03F7/039;(IPC1-7):G03F7/20;G03C1/73 主分类号 G03F7/027
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