发明名称 |
RF amplifier having switched load impedance for back-off power efficiency |
摘要 |
Efficiency of an RF/microwave power amplifier is increased at a back-off power level by increasing the load resistance of the amplifier at the reduced output power level as compared to load impedance at a higher power level including full operating power. The different load impedances can be realized with two amplification units in parallel each having different load impedances. Alternatively, a single amplification path can be provided with an output impedance matching network which is selectively bypassed for increased impedance load during back-off power operation. In another embodiment, the output impedance matching network can include a shunt inductance which is selectively switched into the network to increase impedance for back-off power operation.
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申请公布号 |
US6522201(B1) |
申请公布日期 |
2003.02.18 |
申请号 |
US20000672384 |
申请日期 |
2000.09.28 |
申请人 |
EIC CORPORATION |
发明人 |
HSIAO SHUO-YUAN;ZHOU WEI-SHU;WANG NANLEI Y LARRY |
分类号 |
H03G1/00;(IPC1-7):H03G3/10;H03G3/30 |
主分类号 |
H03G1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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