发明名称 Alignment marks for charged-particle-beam microlithography, and alignment methods using same
摘要 Alignment marks and methods using such marks are provided for use in charged-particle-beam (CPB, e.g., electron-beam) microlithography. The alignment marks are capable of being detected by both an optical-based alignment-mark sensor and a CPB-based alignment-mark sensor. A representative embodiment of such an alignment mark comprises multiple serially arrayed elements having a first period. At least one of the elements comprises multiple serially arrayed sub-elements having a second period that is shorter than the first period. When such a mark is sensed using an optical-based sensor, the period of the sub-elements is not resolvable and the resulting signal will be substantially the same as when none of the elements is subdivided into sub-elements. However, when such a mark is sensed using a CPB-based sensor and scanning the charged particle beam, then the period of the sub-elements is resolvable. Hence, a single alignment mark can be detected using either type of sensor.
申请公布号 US6521900(B1) 申请公布日期 2003.02.18
申请号 US20000518431 申请日期 2000.03.03
申请人 NIKON CORPORATION 发明人 HIRAYANAGI NORIYUKI
分类号 H01L21/027;G03F1/08;G03F1/42;G03F9/00;H01J37/304;H01L23/544;(IPC1-7):H01J37/304 主分类号 H01L21/027
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