发明名称 |
AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor |
摘要 |
A heterojunction bipolar transistor is provided that has a reduced turn-on voltage threshold. A base spacer layer is provided and alternately an emitter layer is provided that has a lowered energy gap. The lowered energy gap of the base spacer or the emitter spacer allow the heterojunction bipolar transistor to realize a lower turn-on voltage threshold. The thickness of the emitter layer if utilized is kept to a minimum to reduce the associated space charge recombination current in the heterojunction bipolar transistor.
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申请公布号 |
US2003032252(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20020201760 |
申请日期 |
2002.07.22 |
申请人 |
MICROLINK DEVICES, INC. |
发明人 |
PAN NOREN;HAN BYUNG-KWON |
分类号 |
H01L21/331;H01L29/08;H01L29/10;H01L29/45;H01L29/737;(IPC1-7):H01L21/331;H01L21/822;H01L31/072;H01L31/032 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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