Method for forming tunnel oxide film of flash memory

摘要

A method for forming a tunnel oxide film of a flash memory. A chamber having a wafer therein is provided. Hydrogen and oxygen are introduced into the chamber, whereby the chamber has a pressure and a temperature therein. The pressure of the chamber is decreased to about 5-15 torrs. The temperature of the chamber is increased to about 850° C. to about 1100° C., whereby the hydrogen reacts with the oxygen to form a plurality of oxygen radicals, and whereby the oxygen radicals react with the wafer to form a silicon oxide film.