| 摘要 |
PURPOSE: A cleaning solution of a semiconductor device and a cleaning method using the same are provided to improve throughput of a via etch post cleaning process by reducing a time for removing contaminants of a semiconductor substrate. CONSTITUTION: A cleaning solution is fabricated by using RCA cleaning chemicals instead of hydroxylamine or catechol. The cleaning solution includes NH4OH, HF, and CH3COOH as basic materials. A main solvent of the cleaning solution is a deionized water. A composition ratio of NH4OH, HF, CH3COOH, and the deionized water is 1 to 5: 0.1 to 5: 0.01 to 1: 5 to 50. The cleaning solution has 7 to 12 pH. The cleaning solution is used for cleaning a semiconductor substrate including contaminants after an etch process is performed. An undercut of a Ti layer is not generated by performing the cleaning process with the cleaning solution. In addition, a spot is not generated on a metal layer.
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