发明名称 WIREDRAWING METHOD OF METAL FINE WIRE FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a wiredrawing method of metal fine wire for a semiconductor device which improves longevity of a die while keeping surface smoothness of metal fine wire. SOLUTION: A desired diameter of metal fine wire 1' is produced by arranging plural number of dies 2a-2h and also capstans 3, 3' to draw a wire rod 1 which sequentially passes each die. In order to perform a wiredrawing by a single crystal diamond die after the wiredrawing is performed by a polycrystalline diamond die, a single crystal diamond die is arranged after the required number of the polycrystalline diamond dies. The wiredrawing process by the polycrystalline diamond dies is to be finished at the stage when a drawn mark on the surface of the wire rod 1 generated by wiredrawing is minute.
申请公布号 JP2003033810(A) 申请公布日期 2003.02.04
申请号 JP20010218478 申请日期 2001.07.18
申请人 TANAKA ELECTRONICS IND CO LTD 发明人 HARADA NORIAKI
分类号 B21C3/02;B21C1/00;B21C1/04;(IPC1-7):B21C3/02 主分类号 B21C3/02
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