| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, using a coating which has small stress as an insulation film, with proper embedding ability in a trench and so on, and low density in the trench. SOLUTION: Since heat treatment is applied on higher-order silane, which is expressed by any of the chemical formulas Sin H2n , Sin H2n+2 , and Si6+4n H12+6n (n is an integer of 1 or more), in an atmosphere containing oxygen, decomposition and oxidation of the higher order silane is developed, to form a silicon oxide thin film 3. The silicon oxide film is used as an embedded material and an interlayer insulating film of a trench 5 which is formed on the principle surface of a semiconductor substrate 1. A silicon oxide film (SiO2 ), made of the higher order silane, is far smaller in stress than a conventional oxide film, hardly causes warpage, has proper embedding ability, and is smaller in density of the trench than an interlayer insulation film which is formed on the flat principle surface of the semiconductor substrate, thereby achieving low relative permittivity. |
