| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric nonvolatile semiconductor memory constituted of a ferroelectric material having a high temperature stability. SOLUTION: The ferroelectric nonvolatile semiconductor memory comprises a memory unit MU having a bit line BL, a selecting transistor TRa, M pieces (wherein M>=2) of memory cells MCM, and M pieces of plate wires PLM. In this memory, each memory cell has a first electrode 21, a ferroelectric layer 22, and a second electrode 23. In the memory unit, a first electrode 21 of the cells is common and connected to a bit line BL via the transistor TR, and the second electrode 23 of m-th memory cell is connected to m-th plate line. The ferroelectric layer for constituting each memory cell has a Bi3- X+d CaX-d Ti1- X(NbZ, Ta1- Z)1+ XO9 crystal grain (wherein 0<X<0.45, 0<=d<0.1, X-d>0, 0<=Z<=1).
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