| 摘要 |
<p>High quality epitaxial layers of monocrystalline materials (313) can be grown overlying monocrystalline substrates (301) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (315) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (316) of silicon oxide. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The epitaxial monocrystalline material has an upper surface (322) that is positioned coplanar with a surface of an adjacent layer carried by the substrate, thereby facilitating the fabrication of overlying layers that bridge the epitaxial monocrystalline material and the adjacent layer.</p> |
