MULTI-STEP ETCH METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A multi-step etch method for fabricating a semiconductor device is provided to prevent an undesired etch operation by performing the next etch process after removing the remaining gas of a previous process. CONSTITUTION: The first and the second mass flow controller are turned on sequentially(S110,S120). An RF power is turned on and the first etch process is performed(S130,S140). The RF power is turned off after the first etch process(100) is performed(210). The first and the second mass flow controller are turned off(S220,S230). The third mass flow controller is turned on(S240). The second mass flow controller is turned on after the first stabilization process(S200) is performed(S300). The RF power is turned on(S410). The second etch process is performed(S420). The RF power is turned off(S510). The second mass flow controller is turned off(S520). The third mass flow controller is turned off(S530).