发明名称 FAILURE CORRECTING METHOD, TREATING DEVICE OF SUBSTRATE, FAILURE SPECIFYING DEVICE AND FAILURE CORRECTING SYSTEM
摘要 PROBLEM TO BE SOLVED: To properly correct a failure when the failure related to film thickness of a resist film is generated. SOLUTION: Two sheets of wafers which are completed in film forming treatment are conveyed respectively to a rotation unit 50 and a film thickness measuring unit 25 in order and the film thickness at the part of different diameter is measured. In accordance with the film thickness profile obtained by the measurement, a deviation of the swollen part of the resist film is grasped and the position of a main conveyance unit 40 or the exhaust in a pre-baking unit is controlled so as to dissolve the deviation on the basis of the deviation. As a result, the failure related to film thickness of the resist film is dissolved.
申请公布号 JP2003024862(A) 申请公布日期 2003.01.28
申请号 JP20010212152 申请日期 2001.07.12
申请人 TOKYO ELECTRON LTD 发明人 AIUCHI TAKASHI;SUZUKI AKIHITO;KAMAMOTO HIROTSUGU;YONEMURA SHUICHI;IMAFU TAKASHI;SAKAMOTO KAZUHISA
分类号 G01B21/02;B05C11/08;B05D1/40;B05D3/00;G01B21/08;G01N21/956;G03F7/16;G03F7/26;H01L21/027 主分类号 G01B21/02
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