发明名称 |
FAILURE CORRECTING METHOD, TREATING DEVICE OF SUBSTRATE, FAILURE SPECIFYING DEVICE AND FAILURE CORRECTING SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To properly correct a failure when the failure related to film thickness of a resist film is generated. SOLUTION: Two sheets of wafers which are completed in film forming treatment are conveyed respectively to a rotation unit 50 and a film thickness measuring unit 25 in order and the film thickness at the part of different diameter is measured. In accordance with the film thickness profile obtained by the measurement, a deviation of the swollen part of the resist film is grasped and the position of a main conveyance unit 40 or the exhaust in a pre-baking unit is controlled so as to dissolve the deviation on the basis of the deviation. As a result, the failure related to film thickness of the resist film is dissolved. |
申请公布号 |
JP2003024862(A) |
申请公布日期 |
2003.01.28 |
申请号 |
JP20010212152 |
申请日期 |
2001.07.12 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
AIUCHI TAKASHI;SUZUKI AKIHITO;KAMAMOTO HIROTSUGU;YONEMURA SHUICHI;IMAFU TAKASHI;SAKAMOTO KAZUHISA |
分类号 |
G01B21/02;B05C11/08;B05D1/40;B05D3/00;G01B21/08;G01N21/956;G03F7/16;G03F7/26;H01L21/027 |
主分类号 |
G01B21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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