| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a circuit for clamping a word-line voltage which can generate a pumping voltage of a potential being stable even for variation of power source voltage in a process in which power source voltage is pumped for not only a flash memory cell but an element driven by a high voltage. SOLUTION: This circuit comprises a reference voltage generating means for generating a reference voltage depending on a first signal, a bootstrap circuit for generating a pumping voltage of a higher potential than a target voltage to an output terminal depending on first and second signals, a control signal generating means for generating the first and second control signals depending on the first - third signals, a clamping control means for falling the pumping voltage depending on the first and second control signals to generate a compare voltage, a comparator for comparing the reference voltage and the compare voltage to generate a third signal, and discharge means for discharging the potential of the output terminal depending on the third signal to fall the pumping voltage to the target voltage.</p> |
