| 摘要 |
A solid-state imaging device includes a photodiode including a well region of a first conductivity type, a first impurity region of a second conductivity type, and a heavily doped impurity region of a first conductivity type formed on the first impurity region. The solid-state imaging device further includes a gate electrode that transfers charges accumulated in the photodiode and a readout region composed of an impurity region of a second conductivity type. A second impurity region of a second conductivity type extends from the first impurity region of a second conductivity type to the readout region. Furthermore, an impurity region of a first conductivity type is formed below the gate electrode. This configuration facilitates complete charge transfer from the photodiode in a readout process. This solid-state imaging device barely generates random noise and can pick up moving images with high definition.
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