| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film magnetic storage device which can perform high speed and stable read-out of data. SOLUTION: A data bus DB pre-charged at pre-charge voltage Vpr before read-out of data is coupled electrically to the same voltage as the pre-charge voltage Vpr through a selection memory cell at the time of read-out of data. A drive transistor 62a couples the data bus DB and power source voltage VDD to cause to flow a sense current at the time of read-out of data. An electric charge transfer type amplifier section 100 generates output voltage Vout in accordance with an integration value of a sense current Is flowing in the data bus DB keeping voltage of the data bus DB at the pre-charge voltage Vpr. A transfer gate 130, a differential amplifier 140, and a latch circuit 145 generate read-out data DOUT based on output voltage Vout in the prescribed timing.
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