| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method in which the formation of SiO2 of a low dielectric layer is suppressed, capacity is increased and a withstand voltage is increased. SOLUTION: In an MIS(Metal Insulator Semiconductor) type semiconductor device by the manufacturing method of forming a mixed layer composed of Si and one or more kinds of metal elements, oxidizing the mixed layer, and forming a gate insulation film; a high capacity MIS transistor element with suppressed low dielectric constant SiO2 formation is manufactured between an Si single crystal substrate and the gate insulation film.
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