| 摘要 |
A first gate oxide layer 22a is formed by oxidizing a thin film polysilicon silicon layer 10a, subsequently the structure is annealed to improve the parametric performance of the device, a second gate oxide layer 24a comprising TEOS is then deposited by CVD and densified using a high temperature anneal. The first and second oxide layers form a composite gate oxide layer of a TFT device. Alternatively, the TEOS layer may be formed directly on the polysilicon active layer and densified using an annealing process.
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