NITRIDE SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor laser device capable of reducing the forward voltage. SOLUTION: This nitride semiconductor laser device manufacturing method comprises a first process of forming a ridge (a P-type AlGaN clad layer 10 and a P-type GaN contact layer 11a), a second process of forming a current block layer 12 so as to cover at least the side face of the ridge, and a third process of forming a P-type GaN contact layer 11b on the ridge (the P-type GaN contact layer 11a) and the current block layer 12 through a selective lateral growth method.