| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to prevent contamination due to exposure of a metal gate and to reduce junction capacitance without overlapping a channel region to a junction region. CONSTITUTION: After forming sequentially a gate oxide layer(203) and a dummy polysilicon layer on a substrate(201), an oxide layer(205) grows at sidewalls of the dummy polysilicon layer and on the substrate by re-oxidation processing. A spacer(206) is formed at both sidewalls of the oxide layer(205) and the oxide layer(205) existing on the substrate is simultaneously removed. A junction region(207) is formed in the substrate. A gate oxidation film(208) is formed to expose the surface of the dummy polysilicon layer. After removing the dummy polysilicon layer, a channel region(209) is formed without overlapping the junction region(207). Then, the first polysilicon layer(210), a metal gate(211) and the second polysilicon layer(212) are sequentially formed on the resultant structure.
|
