SEMICONDUCTOR DEVICE, MICROWAVE INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To simultaneously form an active element and a passive element in small number of steps by forming the active element as a self-aligned element having a T type gate structure, in a microwave integrated circuit integrated on the same compound semiconductor substrate with the active element and the passive element. SOLUTION: A p-type impurity element is simultaneously ion implanted in a region formed with the active element and a region formed with the passive element on the compound semiconductor substrate to form a high resistance region. A capacitor lower side electrode is formed on the passive element region simultaneously at the low resistance gate electrode in the T type gate structure.