| 摘要 |
PURPOSE: A method for fabricating an isolation layer of a semiconductor device is provided to decrease a leakage current and improve a refresh characteristic of a dynamic random access memory(DRAM) device by sending a defect in a depletion layer to the outside of the depletion layer. CONSTITUTION: A predetermined region of a semiconductor substrate(31) is etched by a predetermined depth to form a trench(35). A polysilicon layer(37) is formed on the sidewall of the trench and under the trench. After an oxide layer(38) is formed on the resultant structure, a polishing process is performed to form the isolation layer(39).
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