| 摘要 |
The tetraethyl orthosilicate (TEOS) films (12,24,36,48) are provided directly between the low-constant dielectric layers (18,42) and nitrogen base layers (6,30,54), so as to prevent the diffusing of N-H bases from the nitrogen base layer to low-constant dielectric layers. The low-constant dielectric layers comprise organo-silicate glass on SIOC-H. The N-H base groups comprise amines or amino silicates. An Independent claim is also included for very large-scale integrated circuit device manufacturing method. |
