| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to easily perform a metal contact process by minimizing the step coverage between a cell region and a peripheral circuit region, and to improve a sensing margin by guaranteeing cell capacitance. CONSTITUTION: The first insulation layer(22) is formed on a substrate having a predetermined conductive structure and a predetermined insulated structure. A conductive layer(23) for the first plate electrode is formed on the first insulation layer in the cell region. The second insulation layer(24) is formed on the resultant structure including the conductive layer for the first plate electrode. The first insulation layer in a capacitor formation region, the conductive layer for the first plate electrode and the second insulation layer are selectively etched. The insulated structure is selectively etched to form a charge storage electrode contact hole. A conductive layer(27) for the second plate electrode is deposited along the resultant structure having the charge storage electrode contact hole while the charge storage electrode contact hole is filled. The conductive layer for the second plate electrode is etched back to be formed on the sidewall of a pattern to which the first insulation layer, the second insulation layer and the conductive layer for the first plate electrode are exposed, filled in the charge storage electrode contact hole. A dielectric thin film(28) is formed on the conductive layer for the second plate electrode. The dielectric thin film is covered with a charge storage electrode in contact with the conductive structure.
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