发明名称 NOVEL PHOTORESIST POLYMER AND PHOTORESIST COMPOSITION COMPRISING THE SAME
摘要 PURPOSE: Provided are a novel photoresist polymer which can be used at light source of VUV(vacuum ultraviolet)(157 nm) and EUV(extreme ultraviolet)(13 nm), and a photoresist composition comprising the same. CONSTITUTION: The photoresist comprises a repeating unit of the formula 3. In the formula 3, R1 represents an acid labile protecting group, R2 represents an alicyclic pendant group, and a:b is 10-90:10-90(mole%). The acid labile protecting group is selected from the group consisting of t-butyl, 1-ethoxyethyl, 1-cyclohexyloxyethyl, tetrahydropyran-2-yl, 2-methyl tetrahydropyran-2-yl, tetrahydrofuran-2-yl, 2-methyl tetrahydrofuran-2-yl, 1-methoxypropyl, 1-methoxy-1-methylethyl, 1-ethoxypropyl, 1-ethoxy1-methylethyl, 1-methoxyethyl, t-butoxyethyl, 1-isobutoxyethyl, and 2-acetylment-1-yl.
申请公布号 KR20030001784(A) 申请公布日期 2003.01.08
申请号 KR20010037471 申请日期 2001.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, MIN HO;PARK, DONG HYEOK
分类号 G03F7/004 主分类号 G03F7/004
代理机构 代理人
主权项
地址
您可能感兴趣的专利