| 摘要 |
PURPOSE: Provided are apparatus and method for preparing gallium nitride(GaN) powder forming electrical insulating layer for electro luminescence devices having a simplified process and structure compared with conventional devices. CONSTITUTION: The GaN powder forming electrical insulating layer is prepared by the following steps of; (i) reacting Ga and HCl gas at 600-900deg.C for GaCl(gas) or heating GaCl powder at 200-500deg.C for vaporizing; supplying GaCl and N2 gas to a reaction tube(10) with a quartz plate(11) set alternatively; (ii) reacting with NH3 gas supplied through a tube(13) at 800-1100deg.C; (iii) feeding Zn, Cd, and Mg powder to the quartz tube that GaN powder is formed, heating to 600-1100deg.C and rotating at 50-200rpm to diffuse p-type impurities on the surface of GaN powder homogeneously, or feeding ZnS, CdS and ZnO to the quartz tube, heating and rotating to diffuse p-type and n-type impurities on the surface of GaN powder simultaneously for improving luminescence efficiency of GaN powder. The electro luminescence devices are produced by spraying GaN powder over a lower electrode(Cu or Al plate), followed by forming electric transparent oxide electrode as an upper electrode. |
