| 摘要 |
PURPOSE: A method for measuring an impedance of a semiconductor memory device is provided to easily measure the impedance by detecting a characteristic impedance of channels at which data is read and written by DRAM without having an impedance measurement device, thereby identifying a suitability of the module. CONSTITUTION: A method for measuring an impedance of a semiconductor memory device provided with a master(1) and a plurality of slaves(2,3) includes the steps of: comparing and outputting a difference between voltages outputted from the slaves(2,3) and a reference voltage at a differential amplifier of the slaves(2,3); and measuring an impedance of the module without utilizing an impedance measurement device.
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