| 摘要 |
PURPOSE: A metal contact formation method of a flash memory device is provided to minimize a gap between a source and drain contacts by using a field oxide, a control gate line and the source contact having a Z-line shape. CONSTITUTION: A field oxide layer(102) having a Z-line shape to a horizontal direction is formed on a semiconductor substrate. A control gate line(104) having Z-line shape to a vertical direction is formed to cross with the field oxide layer(102). An etch stopper and an interlayer dielectric are sequentially formed on the resultant structure. After forming a photoresist pattern(130) to expose a source/drain region, a source and drain contact(S2,D2) having Z-line shape to a horizontal direction with the control gate line(104) are formed by selectively etching the interlayer dielectric using the photoresist pattern(130) as a mask.
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