| 摘要 |
PURPOSE: An interlayer dielectric formation method of semiconductor devices is provided to prevent a generation of void by forming a sloped spacer before depositing an interlayer dielectric. CONSTITUTION: A plurality of metal lines(22) are formed on a semiconductor substrate(20). By forming an oxide layer on the resultant structure and selectively etching the oxide layer using an RIE(Reactive Ion Etching), a sloped spacer(30a) having a good step-coverage is formed at both sidewalls of the metal lines(22). Then, an interlayer dielectric(70) is formed on the entire surface of the resultant structure.
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