| 摘要 |
There is provided a semiconductor memory device in which the trouble in reading data due to an overshoot of a data signal can be avoided even when a reference signal for giving a reference for the determination a logical value of the data signal from a memory cell is constantly generated. This semiconductor memory device is constructed such that data is read by comparing a data signal from a memory cell with a reference signal from a reference cell in a differential-type sense amplifier. The semiconductor memory device comprises a feedback circuit for limiting a relative change between the reference signal and the data signal received by the differential-type sense amplifier. This feedback circuit momentarily feeds an output of the differential-type sense amplifier back to its input node, when data stored in the memory cell is read out, to thereby momentarily render the data signal and the reference signal equal to each other.
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