发明名称 METHOD FOR FABRICATING TEST PATTERN OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for fabricating a test pattern of a semiconductor device is provided to prevent an error in a pattern test and to improve reliability of in-line monitoring by leaving a plurality of insulation materials of an independent line type between conductive material in a pad area. CONSTITUTION: A conductive material is formed in a pad formation region of a semiconductor substrate. An insulation material of a mesh type is formed in the pad formation region, or the conductive material is formed after an interlayer dielectric(42) in the pad formation region is left as a mesh type.
申请公布号 KR20030000664(A) 申请公布日期 2003.01.06
申请号 KR20010036727 申请日期 2001.06.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHO, MIN GUK;JUNG, SEONG MUN;KIM, JEOM SU;LEE, YEONG BOK
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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