发明名称 |
METHOD FOR FABRICATING TEST PATTERN OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for fabricating a test pattern of a semiconductor device is provided to prevent an error in a pattern test and to improve reliability of in-line monitoring by leaving a plurality of insulation materials of an independent line type between conductive material in a pad area. CONSTITUTION: A conductive material is formed in a pad formation region of a semiconductor substrate. An insulation material of a mesh type is formed in the pad formation region, or the conductive material is formed after an interlayer dielectric(42) in the pad formation region is left as a mesh type.
|
申请公布号 |
KR20030000664(A) |
申请公布日期 |
2003.01.06 |
申请号 |
KR20010036727 |
申请日期 |
2001.06.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHO, MIN GUK;JUNG, SEONG MUN;KIM, JEOM SU;LEE, YEONG BOK |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|