Fabrication of metal oxide semiconductor transistor by producing gate and sacrificial block on substrate using single photolithographic mask, and producing drain extension by implantation of dopants

摘要

A metal oxide semiconductor (MOS) transistor is fabricated by producing a gate (GR) of transistor and a sacrificial block (BS) on a substrate (SB) using a single photolithographic mask. A drain extension (ZXT) is produced by specific implantation of dopants between the gate and the sacrificial block. The drain is produced by an implantation of dopants under the sacrificial block. Fabrication of an MOS transistor with a drain extension, comprises producing an implanted drain region on a substrate coated at a distance separating the gate which is greater tan the distance separating the gate from the implanted source region, and producing a drain extension zone lying in the substrate between a drain region and a gate. The gate of the transistor and a sacrificial block separated from the gate by a distance equal to the desired length for the drain extension, are produced on the upper surface of the substrate using a single photolithographic mask and the same gate material. The production of the drain extension comprises a specific implantation of dopants in the substrate between the gate and the sacrificial block. The production of the drain comprises an implantation of dopants in the sacrificial block located under the sacrificial block after removing the sacrificial block.