EPITAXIAL GROWING METHOD FOR GROWING ALUMINUM NITRIDE AND GROWING CHAMBER THEREFOR

摘要

The invention relates to an epitaxial growing method for growing monocrystalline aluminum nitride from a mixture of nitrogen and aluminum vapors, said method comprising the following steps: a substrate (4) and a source of aluminum (5) are placed opposite to each other inside a growing chamber (3); said substrate is heated to a temperature ensuring the growth of monocrystalline aluminum nitride, whereby said temperature is maintained. Inside the growing chamber (3), the pressure of the mixture of nitrogen and aluminum vapors is maintained, whereby said pressure exceeds, by no more than 400 millibars, a lower threshold equal to the pressure generated within a closed space by a stoichiometric mixture of nitrogen and aluminum vapors formed by evaporation of the source material (5). The invention also relates to a growing chamber (3), whereby the material in contact with the source and the aluminum vapors of the surface inside said chamber is a solid solution of tantalum carbide in carbide.