Semiconductor device having an improved multi-layer interconnection structure and manufacturing method thereof

摘要

A semiconductor device, having a multi-layer interconnection structure, is provided which comprises a semiconductor substrate and a plurality of interlayer insulating films formed on the semiconductor substrate. A plurality of conductive leads are formed in the interlayer insulating films. In one of the interlayer insulating films having conductive lead or leads, at least one conductive plug is formed vertically to connect the conductive leads in different interlayer insulating films. Further, adjacent conductive leads may be formed in an adjacent interlayer insulating films are connected together to form a unified conductive lead.