| 摘要 |
PURPOSE: A fabrication method of a semiconductor device is provided to prevent losses of a nitride hard mask and to entirely remove polysilicon residues without an excessive polishing. CONSTITUTION: An insulating layer(60) is formed on a semiconductor substrate(10) including a gate line(30) and a nitride hard mask(40). A landing plug contact region is formed by selectively etching the insulating layer(60). A conductive layer(80) for filling the landing plug contact region is formed on the entire surface of the resultant structure including the landing plug contact region. A doped polysilicon layer is used as the conductive layer(80). Then, the conductive layer(80) is wet-etched so as to remove polysilicon residues. Then, the resultant structure is planarized by using a CMP(Chemical Mechanical Polishing).
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