METHOD FOR MANUFACTURING CONTACT HOLE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact hole in a semiconductor device is provided to prevent mirror effect, damage of a gate oxide layer and exposure of a conductive line by two-step etching of an interlayer dielectric. CONSTITUTION: An interlayer dielectric(2) is formed on a semiconductor substrate(1). A photoresist pattern(3) is formed to expose a contact formation region. The interlayer dielectric(2) is firstly etched to generate polymers by using mixed gases of C4F8 and Ar, or C4F8/CH3F/Ar, thereby forming a groove(4) having a vertical profile. The interlayer dielectric(2) is secondly etched by slope etching, thereby forming a contact hole(5) having a sloped profile.