| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve the gate insulation dielectric strength of a longitudinal MOSFET and enhance the operating speed of the longitudinal MOSFET. SOLUTION: On the surface of a semiconductor substrate 11 of a 1st conductivity-type and on the surface of the 1st semiconductor layer 12, a 2nd semiconductor layer 16 of a 2nd conductivity-type is formed. In the 2nd semiconductor layer 16, a groove 13 is formed to an inner part of the 1st semiconductor layer 12 from the surface of the 2nd semiconductor layer 16, and a gate electrode 15 is formed in the groove 13. On the 2nd semiconductor layer 16, an interlayer insulating film 22 is formed which covers the gate electrode 15 and in the interlayer insulating film 22, a contact hole 21 which exposes the gate electrode 15 is formed. The contact hole 21 is filled with a conductor plug 19. A gate wire 24 formed on the interlayer insulating film 22 is electrically connected to the gate electrode 15 via the conductor plug 19.
|
